Valence band structure calculations of strained Ge${}_{1-x}$Sn${}_x$ quantum well pFETs

H-S Lan, C W Liu

The dependence of valence band structures of Ge${}_{1-x}$Sn${}_x$ with 0 $\le$ $x$ $\le$ 0.2 on Sn content, biaxial strain, and substrate orientation is calculated using the nonlocal…