Huang-Siang Lan

collaborators

2 papers

physics.comp-ph2017

Valence band structure calculations of strained Ge $_{1 - x}$ Sn $_{x}$ quantum well pFETs

H-S Lan, C W Liu

The dependence of valence band structures of Ge $_{1 - x}$ Sn $_{x}$ with 0 $\leq$ $x$ $\leq$ 0.2 on Sn content, biaxial strain, and substrate orientation is calculated using the nonlocal…

cond-mat.mes-hall2016

Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge $_{1 - x}$ Sn $_{x}$ alloys

H. -S. Lan, S. T. Chang, C. W. Liu

Electronic structures of Ge $_{1 - x}$ Sn $_{x}$ alloys (0 $\leq$ $x$ $\leq$ 1) are theoretically studied by nonlocal empirical pseudopotential method. For relaxed Ge $_{1 - x}$ Sn $_{x}$ , a…

Valence band structure calculations of strained Ge1−x​Snx​ quantum well pFETs

Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge1−x​Snx​ alloys

Valence band structure calculations of strained Ge $_{1 - x}$ Sn $_{x}$ quantum well pFETs

Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge $_{1 - x}$ Sn $_{x}$ alloys