96 citations · 103 across the 6 of their papers we have counts for
6 papers
A Si-memristor electronically and uniformly switched by a constant voltage
Yang Lu, I-Wei Chen
Amorphous insulators have localized wave functions that decay with the distance following exp(). Since nanoscale conduction is not excluded at , one may use amorphou…
Purely electronic nanometallic ReRAM
Yang Lu, Jung Ho Yoon, Yanhao Dong +1
Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the po…
Scalability of Voltage-Controlled Filamentary and Nanometallic Resistance Memories
Yang Lu, Jong Ho Lee, I-Wei Chen
Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rat…
Conducting Electrons in Amorphous Si Nanostructures: Coherent Interference and Metal-Insulator Transitions Mediated by Local Structures
Yang Lu, I-Wei Chen
Without a periodic reference framework, local structures in noncrystalline solids are difficult to specify, but they still exert an enormous influence on materials properties. For…
Pressure-Induced Insulator-to-Metal Transition Provides Evidence for Negative- Centers in Large-Gap Disordered Insulators
Yang Lu, I-Wei Chen
Attractive negative- interactions between electrons facilitated by strong electron-phonon interaction are common in highly polarizable and disordered materials such as amorphous…
Probing Intrinsic Material Conductivity in Two-Terminal Devices: A Resistance-Difference Method
Yang Lu, I-Wei Chen
It is generally impossible to separately measure the resistance of the functional component (i.e., the intrinsic device materials) and the parasitic component (i.e., terminals, int…