11 citations · 29 across the 4 of their papers we have counts for
3 papers
cond-mat.mes-hall2017★ 5 cited
Moderate bending strain induced semiconductor to metal transition in Si nanowires
M. Golam Rabbani, Sunil R. Patil, M. P. Anantram
Moderate amount of bending strains, ~3% are enough to induce the semiconductor-metal transition in Si nanowires of ~4nm diameter. The influence of bending on silicon nanowires of 1…
cond-mat.mes-hall2017★ 11 cited
Zero-bias photocurrents in highly-disordered networks of Ge and Si nanowires
M. Golam Rabbani, Sunil R. Patil, Amit Verma +6
Semiconducting nanowire (NW) devices have garnered attention in self-powered electronic and optoelectronic applications. This work explores and exhibits, for the first time for vis…
physics.comp-ph2017★ 2 cited
Nested Dissection Solver for Transport in 3D Nano-Electronic Devices
Y. Zhao, U. Hetmaniuk, S. R. Patil +2
The Hierarchical Schur Complement method (HSC), and the HSC-extension, have significantly accelerated the evaluation of the retarded Green's function, particularly the lesser Green…