3 citations · 4 across the 8 of their papers we have counts for
8 papers
Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation
A. Talukder, M. Kashem, M. Hafiz +4
We electrically characterized melt-quenched amorphized Ge2Sb2Te5 (GST) phase-change memory cells of 20 nm thickness, ~66-124 nm width and ~100-600 nm length with and without photoe…
Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures
A B M Hasan Talukder, Md Tashfiq Bin Kashem, Raihan Khan +3
We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70-100 nm wide lateral Ge2Sb2Te5…
Stopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5
Md Tashfiq Bin Kashem, Raihan Sayeed Khan, ABM Hasan Talukder +2
We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phase change memory (PCM) line cells by substantially accelerating resistance drift and bringing it to a stop w…
Temperature Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs
A. B. M. Hasan Talukder, Brittany Smith, Mustafa Akbulut +3
Narrow-channel accumulated body nMOSFET devices with p-type side-gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate…
Accelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress
Raihan Sayeed Khan, A. Hasan Talukder, Faruk Dirisaglik +2
We observed resistance drift in 125 K - 300 K temperature range in melt quenched amorphous Ge2Sb2Te5 line-cells with length x width x thickness = ~500 nm x ~100 nm x ~ 50 nm. Drift…
Resistance Drift in Ge2Sb2Te5 Phase Change Memory Line Cells at Low Temperatures and Its Response to Photoexcitation
Raihan Sayeed Khan, Faruk Dirisaglik, Ali Gokirmak +1
Resistance drift in phase change materials is characterized in amorphous phase change memory line-cells from 300 K to 125 K range and is observed to follow the previously reported…
Activation Energy of Metastable Amorphous Ge2Sb2Te5 from Room Temperature to Melt
S. Muneer, J. Scoggin, F. Dirisaglik +7
Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measu…
Intrinsically Reliable and Lightweight Physical Obfuscated Keys
Raihan Sayeed Khan, Nadim Kanan, Chenglu Jin +8
Physical Obfuscated Keys (POKs) allow tamper-resistant storage of random keys based on physical disorder. The output bits of current POK designs need to be first corrected due to m…