activity
20172024
most citedPhase Change Logic via Thermal Cross-Talk for Computation in Memory

3 citations · 8 across the 9 of their papers we have counts for

collaborators

9 papers

physics.app-ph2024

Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation

A. Talukder, M. Kashem, M. Hafiz +4

We electrically characterized melt-quenched amorphized Ge2Sb2Te5 (GST) phase-change memory cells of 20 nm thickness, ~66-124 nm width and ~100-600 nm length with and without photoe…

physics.app-ph2024

Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures

A B M Hasan Talukder, Md Tashfiq Bin Kashem, Raihan Khan +3

We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70-100 nm wide lateral Ge2Sb2Te5…

physics.app-ph2022★ 3 cited

Stopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5

Md Tashfiq Bin Kashem, Raihan Sayeed Khan, ABM Hasan Talukder +2

We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phase change memory (PCM) line cells by substantially accelerating resistance drift and bringing it to a stop w…

cond-mat.mtrl-sci2021★ 3 cited

Phase Change Logic via Thermal Cross-Talk for Computation in Memory

Nadim Kanan, Raihan Sayeed Khan, Zachary Woods +2

We have computationally demonstrated logic function implementations using lateral and vertical multi-contact phase change devices integrated with CMOS circuitry, which use thermal…

cs.ET2020★ 1 cited

Scaling of Multi-contact Phase Change Device for Toggle Logic Operations

Raihan Sayeed Khan, Nadim H. Kanan, Jake Scoggin +2

Scaling of two dimensional six-contact phase change devices that can perform toggle logic operations is analyzed through 2D electrothermal simulations with dynamic materials modeli…

physics.app-ph2020

Accelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress

Raihan Sayeed Khan, A. Hasan Talukder, Faruk Dirisaglik +2

We observed resistance drift in 125 K - 300 K temperature range in melt quenched amorphous Ge2Sb2Te5 line-cells with length x width x thickness = ~500 nm x ~100 nm x ~ 50 nm. Drift…