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20162019
most citedMaterial developments and domain wall based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells

35 citations · 86 across the 5 of their papers we have counts for

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cond-mat.mtrl-sci2019

Effect of Tantalum spacer thickness and deposition conditions on the properties of MgO/CoFeB/Ta/CoFeB/MgO free layers

T. Devolder, S. Couet, J. Swerts +3

To get stable perpendicularly magnetized tunnel junctions at small device dimensions, composite free layers that comprise two MgO/FeCoB interfaces as sources of interface anisotrop…