activity
19992021
most citedThermoelectric conversion at 30K in InAs/InP nanowire quantum dots

80 citations · 470 across the 26 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

5 papers · 1 filter

cond-mat.mtrl-sci202120 cited

Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires

Omer Arif, Valentina Zannier, Ang Li +4

The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, w…

cond-mat.mtrl-sci2020

Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy

Eva A. A. Pogna, Mahdi Asgari, Valentina Zannier +3

Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the str…

cond-mat.mtrl-sci2015

Strain induced band alignment in wurtzite-zincblende InAs heterostructured nanowires

Jaya Kumar Panda, Arup Chakraborty, Indra Dasgupta +5

We study band alignment in wurtzite-zincblende polytype InAs heterostructured nanowires using temperature dependent resonance Raman measurements. Nanowires having two different wur…

cond-mat.mtrl-sci200916 cited

Controlled growth of InAs nanowires on engineered substrates

Stefano Roddaro, Philippe Caroff, Giorgio Biasiol +8

We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $…

cond-mat.mtrl-sci2004

Two-dimensional electron gas formation in undoped In[0.75]Ga[0.25]As/In[0.75]Al[0.25]As quantum wells

F. Capotondi, G. Biasiol, I. Vobornik +4

We report on the achievement of a two-dimensional electron gas in completely undoped In[0.75]Al[0.25]As/In[0.75]Ga[0.25]As metamorphic quantum wells. Using these structures we were…