80 citations · 470 across the 26 of their papers we have counts for
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Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires
Omer Arif, Valentina Zannier, Ang Li +4
The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, w…
Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy
Eva A. A. Pogna, Mahdi Asgari, Valentina Zannier +3
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the str…
Strain induced band alignment in wurtzite-zincblende InAs heterostructured nanowires
Jaya Kumar Panda, Arup Chakraborty, Indra Dasgupta +5
We study band alignment in wurtzite-zincblende polytype InAs heterostructured nanowires using temperature dependent resonance Raman measurements. Nanowires having two different wur…
Controlled growth of InAs nanowires on engineered substrates
Stefano Roddaro, Philippe Caroff, Giorgio Biasiol +8
We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $…
Two-dimensional electron gas formation in undoped In[0.75]Ga[0.25]As/In[0.75]Al[0.25]As quantum wells
F. Capotondi, G. Biasiol, I. Vobornik +4
We report on the achievement of a two-dimensional electron gas in completely undoped In[0.75]Al[0.25]As/In[0.75]Ga[0.25]As metamorphic quantum wells. Using these structures we were…