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Raman sensitivity to crystal structure in InAs nanowires
Jaya Kumar Panda, Anushree Roy, Achintya Singha +4
We report a combined electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be…
Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene
Sarah Goler, Camilla Coletti, Vincenzo Piazza +8
On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of Si from the substrate. The graphene film is separated from the bulk by a carbon…
Two-dimensional Mott-Hubbard electrons in an artificial honeycomb lattice
A. Singha, M. Gibertini, B. Karmakar +8
Electrons in artificial lattices enable explorations of the impact of repulsive Coulomb interactions in a tunable system. We have trapped two-dimensional electrons belonging to a g…
Controlled coupling of spin-resolved quantum Hall edge states
Biswajit Karmakar, Davide Venturelli, Luca Chirolli +8
Topologically-protected edge states are dissipationless conducting surface states immune to impurity scattering and geometrical defects that occur in electronic systems characteriz…
Self-assembly and electron-beam-induced direct etching of suspended graphene nanostructures
Sarah Goler, Vincenzo Piazza, Stefano Roddaro +3
We report on suspended single-layer graphene deposition by a transfer-printing approach based on polydimethylsiloxane stamps. The transfer printing method allows the exfoliation of…
Proximity effect in a two dimensional electron gas probed with a lateral quantum dot
Fabio Deon, Vittorio Pellegrini, Francesco Giazotto +3
We report low-temperature transport measurements performed on a planar Nb-InGaAs-Nb proximity Josephson junction hosting a gate-defined lateral quantum dot in the weak-link. We fir…