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physics.app-ph2017
Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography
Roberto Fallica, Dimitrios Kazazis, Robert Kirchner +4
Pattern transfer by deep anisotropic etch is a well-established technique for fabrication of nanoscale devices and structures. For this technique to be effective, the resist materi…
physics.chem-ph2017★ 16 cited
A comparative study of resists and lithographic tools using the Lumped Parameter Model
Roberto Fallica, Robert Kirchner, Dominique Mailly +1
A comparison of the performance of high resolution lithographic tools is presented here. We use extreme ultraviolet interference lithography, electron beam lithography, and He ion…