130 citations · 626 across the 19 of their papers we have counts for
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Localized tip enhanced Raman spectroscopic study of impurity incorporated single GaN nanowire in the sub-diffraction limit
A. Patsha, S. Dhara, A. K. Tyagi
The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is reported using the study of lattice vibrational modes in the evanescent field of Au nanop…
Nonpolar p-GaN/n-Si heterojunction diode characteristics: A comparison between ensemble and single nanowire devices
Avinash Patsha, Ramanathaswamy Pandian, Sandip Dhara +1
The electrical and photodiode characteristics of ensemble and single p-GaN nanowire and n-Si heterojunction devices were studied. Ideality factor of the single nanowire p-GaN/n-Si…
Carrier mediated reduction of stiffness in nanoindented crystalline Si(100)
S. Kataria, Sandip Dhara, S. Dash +1
We report the observation of carrier mediated decrease in the stiffness of crystalline (c)-Si(100) under nanoindentation. The apparent elastic modulii of heavily dopes (1E21 cm-3)…