Temperature anomaly of the V${}_{S}i$ and V${}_C$ vacancy spin coherence time in 4H-SiC

P. Chrostoski, Ifeanyi I. Onwosi, D. H. Santamore

Increasing the spin coherence time (T2) is a major area of interest for spin defect systems such as the silicon (V${}_{S}i$) and carbon (V${}_C^{\pm }$) vacancies in 4H-SiC. Usually as tem…