42 citations · 46 across the 3 of their papers we have counts for
3 papers
Investigation of Lasing in Highly Strained Germanium at the Crossover to Direct Band Gap
Francesco Armand Pilon, Yann-Michel Niquet, Jeremie Chretien +8
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based…
Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications
Alban Gassenq, Kevin Guilloy, Nicolas Pauc +7
Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge c…
Accurate strain measurements in highly strained Ge microbridges
A. Gassenq, S. Tardif, K. Guilloy +16
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain…