239 citations · 1.6k across the 79 of their papers we have counts for
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Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures
Kosuke Takiguchi, Kyosuke Okamura, Le Duc Anh +1
The magnetic proximity effect (MPE), ferromagnetic coupling at the interface of magnetically dissimilar layers, attracts much attention as a promising pathway for introducing ferro…
Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device
Koki Chonan, Nguyen Huynh Duy Khang, Masaaki Tanaka +1
We investigated the spin-dependent transport properties of a lateral spin-valve device with a 600 nm-long GaAs channel and ferromagnetic MnGa electrodes with perpendicular magnetiz…
Spin-valve Effect in Nanoscale Si-based Devices
Duong Dinh Hiep, Masaaki Tanaka, Pham Nam Hai
The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-d…
Spin triplet superconducting proximity effect in a ferromagnetic semiconductor
Taketomo Nakamura, Le Duc Anh, Yoshiaki Hashimoto +3
Conventional spin-singlet superconductivity that deeply penetrates into ferromagnets is typically killed by the exchange interaction, which destroys the spin-singlet pairs. Under c…
Spin-dependent transport and current modulation in a current-in-plane field-effect transistor
Toshiki Kanaki, Tomohiro Koyama, Daichi Chiba +2
We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet / nonferromagnet / ferromagnet trilayer structure and a gate elect…
Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport
Masaaki Tanaka, Shinobu Ohya, Pham Nam Hai
Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-bas…