23 citations · 42 across the 4 of their papers we have counts for
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Simulation of Heavily Irradiated Silicon Pixel Detectors
M. Swartz, V. Chiochia, Y. Allkofer +15
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon…
Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors
M. Swartz, V. Chiochia, Y. Allkofer +14
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon…
Fluence Dependence of Charge Collection of irradiated Pixel Sensors
T. Rohe, D. Bortoletto, V. Chiochia +13
The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feat…
Type inversion in irradiated silicon: a half truth
M. Swartz, D. Bortoletto, V. Chiochia +10
Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field w…