507 citations · 906 across the 6 of their papers we have counts for
6 papers
Ab initio Study of Graphene on SiC
Alexander Mattausch, Oleg Pankratov
Employing density-functional calculations we study single and double graphene layers on Si- and C-terminated 1x1-6H-SiC surfaces. We show that, in contrast to earlier assumptions,…
Thermally stable carbon-related centers in 6H-SiC: photoluminescence spectra and microscopic models
Alexander Mattausch, Michel Bockstedte, Oleg Pankratov +5
Recent ab initio calculations [Mattausch et al., Phys. Rev. B 70, 235211 (2004)] of carbon clusters in SiC reveal a possible connection between the tricarbon antisite (C_3)_Si and…
Structure and vibrational spectra of carbon clusters in SiC
Alexander Mattausch, Michel Bockstedte, Oleg Pankratov
The electronic, structural and vibrational properties of small carbon interstitial and antisite clusters are investigated by ab initio methods in 3C and 4H-SiC. The defects possess…
Ab initio study of the migration of intrinsic defects in 3C-SiC
Michel Bockstedte, Alexander Mattausch, Oleg Pankratov
The diffusion of intrinsic defects in 3C-SiC is studied using an ab initio method based on density functional theory. The vacancies are shown to migrate on their own sublattice. Th…
Annealing mechanisms of intrinsic defects in 3C-SiC: a theoretical study
Michel Bockstedte, Alexander Mattausch, Oleg Pankratov
The annealing kinetics of mobile intrinsic defects is investigated by an ab initio method based on density functional theory. The interstitial-vacancy recombination, the diffusion…
Carbon antisite clusters in SiC: a possible pathway to the D_{II} center
Alexander Mattausch, Michel Bockstedte, Oleg Pankratov
The photoluminescence center D_{II} is a persistent intrinsic defect which is common in all SiC polytypes. Its fingerprints are the characteristic phonon replicas in luminescence s…