most citedOxygen modulated quantum conductance for ultra-thin HfO-based memristive switching devices

18 citations · 18 across the 1 of their papers we have counts for

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1 paper

cond-mat.mes-hall2016★ 18 cited

Oxygen modulated quantum conductance for ultra-thin HfO-based memristive switching devices

Xiaoliang Zhong, Ivan Rungger, Peter Zapol +1

Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and…