Formation of carbon interstitial-related defect levels by thermal injection of carbon into $n$-type 4$H$-SiC

Robert Karsthof, Marianne Etzelmüller Bathen, Andrej Kuznetsov +1

Electrical properties of point defects in 4$H$-SiC have been studied extensively, but those related to carbon interstitials (C${}_i$) have remained surprisingly elusive until now.…