activity
20022017
most citedSatellite Band Structure in Silicon Caused by Electron-Plasmon Coupling

57 citations · 98 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci201741 cited

Depth profiling charge accumulation from a ferroelectric into a doped Mott insulator

M. Marinova, J. E. Rault, A. Gloter +13

The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxid…

cond-mat.mtrl-sci2016

Accurate determination of the valence band edge in hard x-ray photoemission spectra using GW theory

Johannes Lischner, Slavomir Nemsak, Giuseppina Conti +6

We introduce a new method for determining accurate values of the valence-band maximum in x-ray photoemission spectra. Specifically, we align the sharpest peak in the valence-band r…

cond-mat.mtrl-sci201557 cited

Satellite Band Structure in Silicon Caused by Electron-Plasmon Coupling

Johannes Lischner, G. K. Palsson, Derek Vigil-Fowler +5

We report the first angle-resolved photoemission measurement of the wave-vector dependent plasmon satellite structure of a three-dimensional solid, crystalline silicon. In sharp co…

cond-mat.str-el2004

Towards realistic electronic structure calculations of strongly correlated electron systems

V. S. Oudovenko, G. Palsson, K. Haule +2

We review some aspects of the realistic implementation of the dynamical mean-field method. We extend the techniques introduced in Ref.[A. Georges, G. Kotliar, W. Krauth, and M.J. R…

cond-mat.str-el2002

Calculations of Optical Properties in Strongly Correlated Materials

V. S. Oudovenko, G. Palsson, K. Haule +2

We present a new method to calculate optical properties of strongly correlated systems. It is based on dynamical mean field theory and it uses as an input realistic electronic stru…