80 citations · 429 across the 45 of their papers we have counts for
25 papers · 1 filter
Polarization-controlled effective Rabi dynamics in driven Graphene: A Floquet-Magnus approach
V. G. Ibarra-Sierra, J. L. Cardoso, C. Flores-Valente +2
Polarization ellipticity and the relative angle between electron momentum and driving field act as independent control parameters for coherent dynamics in periodically driv…
When Adiabaticity Is Not Enough to Study Topological Phases in Solid-State Physics: Comparing the Berry and Aharonov-Anandan Phases in 2D Materials
Abdiel de Jesús Espinosa-Champo, Alejandro Kunold, Gerardo G. Naumis
Topological phases emerge as the parameters of a quantum system vary with time. Under the adiabatic approximation, the time dependence can be eliminated, allowing the Berry topolog…
Polarization sensitive photodectector based on GaAsN
V. G. Ibarra-Sierra, J. C. Sandoval-Santana, R. S. Joshya +8
We propose and numerically simulate an optoelectronic compact circular polarimeter. It allows to electrically measure the degree of circular polarization and light intensity at roo…
Floquet spectrum and electronic transitions of tilted anisotropic Dirac materials under electromagnetic radiation: monodromy matrix approach
A. Kunold, J. C. Sandoval-Santana, V. G. Ibarra-Sierra +1
We analyze the quasienergy-spectrum and the valence to conduction-band transition probabilities of a tilted anisotropic Dirac material subject to linearly and circularly polarized…
Floquet spectrum for anisotropic and tilted Dirac materials under linearly polarized light at all field intensities
J. C. Sandoval-Santana, V. G. Ibarra-Sierra, A. Kunold +1
The Floquet spectrum in an anisotropic tilted Dirac semimetal modulated by linearly polarized light is addressed through the solution of the time-dependent Schrödinger equation for…
Electron-nucleus spin correlation conservation of the spin dependent recombination in Ga centers
J. C. Sandoval-Santana, V. G. Ibarra-Sierra, H. Carrère +7
Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band ele…