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cond-mat.mtrl-sci2025

Facile Synthesis and On-Chip Color Tuning of CsPbBr@CsPbBrTFA Nanoplatelets via Ion Engineering

Sana Khan, Saeed Goudarzi, Stephan Schäffer +11

Metal halide perovskites (MHPs) have emerged as attractive optoelectronic materials because of high fluorescence quantum yield, broad color tunability, and excellent color purity.…

cond-mat.mtrl-sci2025

Threshold Switching in Vertically Aligned MoS/SiO Heterostructures based on Silver Ion Migration

Jimin Lee, Rana Walied Ahmad, Sofía Cruces +7

Threshold switching (TS) is a phenomenon where non-permanent changes in electrical resistance of a two-terminal device can be controlled by modulating the voltage bias. TS based on…

cond-mat.mtrl-sci2025

Unraveling the dynamics of conductive filaments in MoS based memristors by operando transmission electron microscopy

Ke Ran, Janghyun Jo, Sofía Cruces +4

Advanced operando transmission electron microscopy (TEM) techniques enable the observation of nanoscale phenomena in electrical devices during operation. They can be used to study…

cond-mat.mtrl-sci2025

Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices

Sofía Cruces, Mohit D. Ganeriwala, Jimin Lee +14

Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent ye…

cond-mat.mtrl-sci2025

Influence of Humidity on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors

Lukas Völkel, Rana Walied Ahmad, Alana Bestaeva +8

Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influenc…

cond-mat.mtrl-sci2024

Contact Resistance Optimization in MoS Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

Yuan Fa, Agata Piacentini, Bart Macco +5

Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS)-FETs, have gained significant attention for their potential for ultra…