3 papers
physics.app-ph2025
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
Ruixin Bai, Swarnav Mukhopadhyay, Michael Elliott +9
In this work, we demonstrate a passivation-free Ga-polar recessed-gate AlGaN/GaN HEMT on a sapphire substrate for W-band operation, featuring a 5.5 nm Al0.35Ga0.65N barrier under t…
physics.app-ph2024
Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with free carrier concentration using close-coupled showerhead MOCVD reactor
Swarnav Mukhopadhyay, Parthasarathy Seshadri, Mobinul Haque +6
Thin Si-doped Al-rich (Al>0.85) regrown Al(Ga)N layers were deposited on AlN on Sapphire template using metal-organic chemical vapor deposition (MOCVD) techniques. The optimization…
physics.app-ph2024
Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance
Swarnav Mukhopadhyay, Cheng Liu, Jiahao Chen +5
In this article, high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/ \Box ) is repo…