most citedAlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts

98 citations · 98 across the 1 of their papers we have counts for

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cond-mat.mes-hall2016★ 98 cited

AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts

Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy +2

We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFET) with heterostructure engineered low-resistance ohmic co…