2 papers
cond-mat.mtrl-sci2025
Molecular Beam Epitaxy of 2H-TaS few-layers on GaN(0001)
Constantin Hilbrunner, Tobias Meyer, Joerg Malindretos +1
2H-TaS few layers have been grown epitaxially onto GaN(0001). A high substrate growth temperature of 825C induces best structural properties of the overlayer, as reve…
cond-mat.mtrl-sci2024
Growth Engineering of SrNbO3 Perovskite Oxide by Pulsed Laser Deposition and Molecular Beam Epitaxy
Jasnamol Palakkal, Tobias Meyer, Márton Major +2
Molecular beam epitaxy (MBE) is a state-of-the-art technique for depositing thin films with precise stoichiometric control. However, when depositing oxides of perovskite-type ABO3,…