3 papers
cond-mat.mtrl-sci2025
Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
Maciej Matys, Atsushi Yamada, Toshihiro Ohki +1
The AlGaN/GaN quantum-well heterostructures typically exhibit a positive photoconductivity (PPC) during the light illumination. Surprisingly, we found that introducing the GaN/AlN…
cond-mat.mtrl-sci2025
A simple method for detection and quantitative estimation of deep levels in a barrier layer of AlGaN/GaN HEMT structures by analysis of light induced threshold voltage shift
Maciej Matys, Atsushi Yamada, Yoichi Kamada +1
The characterization of deep levels in AlGaN/GaN heterostructures is one of the most important problems in GaN high electron mobility transistors (HEMTs) technology. This work repo…
cond-mat.mes-hall2025
Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
Maciej Matys, Atsushi Yamada, Toshihiro Ohki
We reported on the observation of extremely high-density (cm) 2D electron gas in N-polar AlGaN/GaN heterostructures grown on sapphire substrates. Due to introducin…