85 citations · 85 across the 1 of their papers we have counts for
7 papers
Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS
Linqiang Xu, Liya Zhao, Chit Siong Lau +7
Wide bandgap oxide semiconductors are very promising channel candidates for next-generation electronics due to their large-area manufacturing, high-quality dielectrics, low contact…
Electrical control of valley polarized charged biexcitons in monolayer WS
Sarthak Das, Ding Huang, Ivan Verzhbitskiy +5
Excitons are key to the optoelectronic applications of van der Waals semiconductors with the potential for versatile on-demand tuning of properties. Yet, their electrical manipulat…
Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
Chit Siong Lau, Sarthak Das, Ivan A. Verzhbitskiy +6
Despite over a decade of intense research efforts, the full potential of two-dimensional transition metal dichalcogenides continues to be limited by major challenges. The lack of c…
Nano-ironing van der Waals Heterostructures Towards Electrically Controlled Quantum Dots
Teymour Talha-Dean, Yaoju Tarn, Subhrajit Mukherjee +11
Assembling two-dimensional van der Waals layered materials into heterostructures is an exciting development that sparked the discovery of rich correlated electronic phenomena and o…
Ultrathick MAN(M'N) Intercalated Monolayers with Sublayer-Protected Fermi Surface Conduction States: Interconnect and Metal Contact Applications
Che Chen Tho, Xukun Feng, Zhuoling Jiang +4
Recent discovery of ultrathick monolayers open up an exciting platform to engineer 2D material properties via intercalation architecture. Here we comput…
Half-Valley Ohmic Contact and Contact-Limited Valley-Contrasting Current Injection
Xukun Feng, Chit Siong Lau, Shi-Jun Liang +3
Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be inc…