3 papers
cond-mat.mtrl-sci2025
Enhanced Secondary Electron Detection of Single Ion Implants in Silicon Through Thin SiO2 Layers
Ella B Schneider, Oscar G Lloyd-Willard, Kristian Stockbridge +7
Deterministic placement of single dopants is essential for scalable quantum devices based on group-V donors in silicon. We demonstrate a non-destructive, high-efficiency method for…
cond-mat.mes-hall2025
Absolute measurement of the exchange interaction in an InSb quantum well using Landau-level tunnelling spectroscopy
S. K. Clowes, C. P. Allford, D. Shearer +5
We studied InSb quantum well devices using Landau level tunneling spectroscopy through a three-terminal differential conductance technique. This method is similar to filled state s…
cond-mat.mes-hall2025
Erbium-implanted WS2 flakes with room-temperature photon emission at telecom wavelengths
Guadalupe GarcÃa-Arellano, Gabriel I. López Morales, Zav Shotan +4
Optically addressable spin impurities in crystals along with device engineering provide an attractive route to realizing quantum technologies in the solid state, but reconciling di…