3 papers
physics.app-ph2025
A novel approach to modelling the properties of HEMTs operating in the saturation region
Kaiyuan Zhao, Guangfen Yao, Xiaoyu Cheng +3
Currently, the ASM-HEMT model, QPZD model and EPFL model are all based on the three-terminal potential as the core, and relate the electrical characteristics such as I-V and C-V to…
cs.ET2025
A Novel Thermal Network Model and Electro-Thermal Coupling Study for NSFETs and CFETs Considering Thermal Crosstalk
Tianci Miao, Qihang Zheng, Yangyang Hu +7
As the technology node continues to shrink, nanosheet field effect transistors (NSFETs) and complementary FETs (CFETs) become valid candidates for the 3nm and sub-nanometre nodes.…
physics.app-ph2025
A Novel Design for SRAM Bitcell with 3-Complementary-FETs
Xiaoyu Cheng, Yangyang Hu, Tianci Miao +9
The complementary field-effect transistors (CFETs), featuring vertically stacked n/p-FETs, enhance integration density and significantly reduce the area of standard cells such as s…