activity
19982004
most citedRole of Oxygen and Carbon Impurities in the Radiation Resistance of Silicon Detectors

2 citations · 4 across the 3 of their papers we have counts for

collaborators
Showing 2003Show all

2 papers · 1 filter

physics.ins-det2003★ 2 cited

Role of Oxygen and Carbon Impurities in the Radiation Resistance of Silicon Detectors

Sorina Lazanu, Ionel Lazanu

The influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation (proton cosmic field at low orbits aroun…

hep-ph2003★ 2 cited

Lindhard Factors and Concentrations of Primary Defects in Semiconductor Materials for uses in HEP

I. Lazanu, S. Lazanu

This report is a compilation of authors' calculations of the Lindhard factors, and of the concentration of primary radiation defects per unit particle fluence in different material…