3 papers
physics.app-ph2023
Photoemission study and band alignment of GaN passivation layers on GaInP heterointerface
S. Shekarabi, M. A. Zare Pour, H. Su +6
III-V semiconductor-based photoelectrochemical (PEC) devices show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a relevant top photoabsorber l…
cond-mat.mtrl-sci2022
Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy
Mohammad Amin Zare Pour, Oleksandr Romanyuk, Dominik C. Moritz +9
Lattice matched n-type AlInP(100) charge selective contacts are commonly grown on n-p GaInP(100) top absorbers in high-efficiency III-V multijunction solar or photoelectrochemical…
cond-mat.mtrl-sci2016
Comment on pyramidal structure formation at the interface between III/V semiconductors and silicon
Thomas Hannappel, Oliver Supplie, Sebastian Bruckner +3
GaP/Si(100) is considered as pseudomporphic virtual substrate for III/V-on-Si integration in order to reduce defects related to polar-on-nonpolar heteroepitaxy. The atomic structur…