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cond-mat.mtrl-sci2022
Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy
Mohammad Amin Zare Pour, Oleksandr Romanyuk, Dominik C. Moritz +9
Lattice matched n-type AlInP(100) charge selective contacts are commonly grown on n-p GaInP(100) top absorbers in high-efficiency III-V multijunction solar or photoelectrochemical…
cond-mat.mtrl-sci2016
Comment on pyramidal structure formation at the interface between III/V semiconductors and silicon
Thomas Hannappel, Oliver Supplie, Sebastian Bruckner +3
GaP/Si(100) is considered as pseudomporphic virtual substrate for III/V-on-Si integration in order to reduce defects related to polar-on-nonpolar heteroepitaxy. The atomic structur…