most citedPolarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

10 citations · 10 across the 1 of their papers we have counts for

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1 paper

cond-mat.mes-hall2016★ 10 cited

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

David A. Deen, Ross Miller, Andrei Osinsky +5

A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated tra…