2 papers
physics.app-ph2025
Quench rate dependence of center formation in Er implanted Si
Mark A. Hughes, Huan Liu, Yaping Dan
Er implanted Si (Er:Si) is a promising candidate for scalable planar quantum memory (QM) applications. Er has a preference to coordinate with O impurities, and multiple types of Er…
physics.app-ph2024
Rapid quench annealing of Er implanted Si for quantum networking applications
Mark A. Hughes, Huan Liu, Adam Brookfield +3
Erbium implanted silicon (Er:Si) is a promising platform for quantum networking applications, but a major obstacle is the formation of multiple Er centres. We show that the previou…