1 citations · 1 across the 2 of their papers we have counts for
3 papers
cs.ET2024
A noise-tolerant, resource-saving probabilistic binary neural network implemented by the SOT-MRAM compute-in-memory system
Yu Gu, Puyang Huang, Tianhao Chen +5
We report a spin-orbit torque(SOT) magnetoresistive random-access memory(MRAM)-based probabilistic binary neural network(PBNN) for resource-saving and hardware noise-tolerant compu…
physics.app-ph2023
SOT-MRAM-Enabled Probabilistic Binary Neural Networks for Noise-Tolerant and Fast Training
Puyang Huang, Yu Gu, Chenyi Fu +10
We report the use of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) to implement a probabilistic binary neural network (PBNN) for resource-saving applications…
cond-mat.mes-hall2016★ 1 cited
Amplicification of Voltage Controlled Magnetic Anisotropy Effect with Negative Capacitance
Lang Zeng, Tianqi Gao, Deming Zhang +6
The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability…