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Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
Eduardo V. Castro, K. S. Novoselov, S. V. Morozov +6
We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements o…
Pseudo-diffusive magnetotransport in graphene
Elsa Prada, Pablo San-Jose, Bernhard Wunsch +1
Transport properties through wide and short ballistic graphene junctions are studied in the presence of arbitrary dopings and magnetic fields. No dependence on the magnetic field i…
Dissipation due to two-level systems in nano-mechanical devices
C. Seoanez, F. Guinea, A. H. Castro Neto
We analyze the dissipation of the frequency vibrations of nano-mechanical devices. We show that the coupling between flexural modes and two-level systems leads to sub-ohmic dissipa…
Dynamical polarization of graphene at finite doping
B. Wunsch, T. Stauber, F. Sols +1
The polarization of graphene is calculated exactly within the random phase approximation for arbitrary frequency, wave vector, and doping. At finite doping, the static susceptibili…
Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
D. Huertas-Hernando, F. Guinea, A. Brataas
A continuum model for the effective spin orbit interaction in graphene is derived from a tight-binding model which includes the and bands. We analyze the combined effects o…
Electronic states and Landau levels in graphene stacks
F. Guinea, A. H. Castro Neto, N. M. R. Peres
We analyze, within a minimal model that allows analytical calculations, the electronic structure and Landau levels of graphene multi-layers with different stacking orders. We find,…