activity
20162024
most citedDirect Characterization of Band Bending in GaP/Si(001) Heterostructures with Hard X-ray Photoelectron Spectroscopy

2 citations · 2 across the 4 of their papers we have counts for

collaborators

4 papers

cond-mat.mtrl-sci2024

A Small Step for Epitaxy, a Large Step Towards Twist Angle Control in 2D Heterostructures

Oliver Maßmeyer, Jürgen Belz, Badrosadat Ojaghi Dogahe +9

Two-dimensional (2D) materials have received a lot of interest over the past decade. Especially van der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs),…

cond-mat.mtrl-sci2023

Structure Determination in a new Type of Amorphous Molecular Solids with Different Nonlinear Optical Properties: A Comparative Structural Analysis

Jonathan Link Vasco, Jens Ruediger Stellhorn, Benjamin Danilo Klee +10

The microscopic structure of two amorphous materials with extreme nonlinear optical properties has been studied. One of these materials exhibits second harmonic generation, while a…

cond-mat.mtrl-sci2023

Measuring spatially-resolved potential drops at semiconductor hetero-interfaces using 4D-STEM

Varun Shankar Chejarla, Shamail Ahmed, Jürgen Belz +3

Characterizing long-range electric fields and built-in potentials in functional materials at nano- to micrometer scales is of supreme importance for optimizing devices. E.g., the f…

cond-mat.mes-hall20162 cited

Direct Characterization of Band Bending in GaP/Si(001) Heterostructures with Hard X-ray Photoelectron Spectroscopy

Martin Schmid, Kunie Ishioka, Andreas Beyer +9

We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. D…