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Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
Eduardo V. Castro, K. S. Novoselov, S. V. Morozov +6
We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements o…
Strong suppression of weak (anti)localization in graphene
S. V. Morozov, K. S. Novoselov, M. I. Katsnelson +4
Low-field magnetoresistance is ubiquitous in low-dimensional metallic systems with high resistivity and well understood as arising due to quantum interference on self-intersecting…
Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
K. S. Novoselov, E. McCann, S. V. Morozov +6
There are known two distinct types of the integer quantum Hall effect. One is the conventional quantum Hall effect, characteristic of two-dimensional semiconductor systems, and the…