832 citations · 3.6k across the 65 of their papers we have counts for
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Enabling visible-light absorption and p-type doping in In2O3 by adding Bi
Fernando P. Sabino, Su-Huai Wei, Anderson Janotti
In2O3 is a prototype wide-band-gap semiconductor that exhibits metallic conductivity when highly doped with Sn while retaining a high degree of transparency to visible light. It is…
Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors
Abhishek Sharan, Zhigang Gui, Anderson Janotti
Heuslers are a prominent family of multi-functional materials that includes semiconductors, half metals, topological semimetals, and magnetic superconductors. Owing to their same c…
Band gap and band offset of GaO and (AlGa)O alloys
Tianshi Wang, Wei Li, Chaoying Ni +1
GaO and (AlGa)O alloys are promising materials for solar-blind UV photodetectors and high-power transistors. Basic key parameters in the device design,…
Large Disparity Between Optical and Fundamental Band Gaps in Layered In2Se3
Wei Li, Fernando P. Sabino, Felipe Crasto de Lima +3
InSe is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse…