activity
20042025
most citedQuantum computing with defects

832 citations · 3.6k across the 65 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

55 papers · 1 filter

cond-mat.mtrl-sci2025★ 11 cited

Symmetry-breaking induced surface magnetization in non-magnetic RuO

Dai Q. Ho, D. Quang To, Ruiqi Hu +2

Altermagnetism is a newly identified phase of magnetism distinct from ferromagnetism and antiferromagnetism. RuO has been considered a prototypical metallic altermagnet with a…

cond-mat.mtrl-sci2024

Role of chalcogen vacancies and hydrogen in the optical and electrical properties of bulk transition-metal dichalcogenides

Shoaib Khalid, Anderson Janotti, Bharat Medasani

Like in any other semiconductor, point defects in transition-metal dichalcogenides (TMDs) are expected to strongly impact their electronic and optical properties. However, identify…

cond-mat.mtrl-sci2023★ 1 cited

Fermi-level pinning in ErAs nanoparticles embedded in III-V semiconductors

Ruiqi Hu, Dai Q. Ho, Quang To +2

Embedding rare-earth pnictide (RE-V) nanoparticles into III-V semiconductors enables unique optical, electrical, and thermal properties, with applications in THz photoconductive sw…

cond-mat.mtrl-sci2023

Large Rashba splittings in bulk and monolayer of BiAs

Muhammad Zubair, Igor Evangelista, Shoaib Khalid +2

Two-dimensional materials with Rashba split bands near the Fermi level are key to developing upcoming next-generation spintronics. They enable generating, detecting, and manipulati…

cond-mat.mtrl-sci2023★ 10 cited

The deep-acceptor nature of the chalcogen vacancies in 2D transition-metal dichalcogenides

Shoaib Khalid, Bharat Medasani, John L. Lyons +2

Chalcogen vacancies in the semiconducting monolayer transition-metal dichalcogenides (TMDs) have frequently been invoked to explain a wide range of phenomena, including both uninte…

cond-mat.mtrl-sci2023★ 2 cited

Dramatic enhancement of visible-light absorption in TiO2 by adding Bi

Fernando P. Sabino, Anderson Janotti

TiO2 is a wide band-gap semiconductor that has been intensively investigated for photocatalysis and water-spiting. However, weak light absorption in the visible region of the spect…

cond-mat.mtrl-sci2023★ 4 cited

Non-trivial topology in rare-earth monopnictides from dimensionality reduction

Dai Q. Ho, Ruiqi Hu, D. Quang To +2

Thin films of rare-earth monopnictide semimetals are expected to turn into semiconductors due to quantum confinement effect, which lifts the overlap between electron pockets at Bri…

cond-mat.mtrl-sci2023★ 1 cited

Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films

Hadass S. Inbar, Muhammad Zubair, Jason T. Dong +8

Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B s…

cond-mat.mtrl-sci2022★ 1 cited

Tuning the Band Topology of GdSb by Epitaxial Strain

Hadass S. Inbar, Dai Q. Ho, Shouvik Chatterjee +12

Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, wi…

cond-mat.mtrl-sci2022★ 12 cited

Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films

Hadass S. Inbar, Dai Q. Ho, Shouvik Chatterjee +12

Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmoni…

cond-mat.mtrl-sci2022

Hybrid Molecular Beam Epitaxy of Ge-based Oxides

Fengdeng Liu, Tristan K Truttmann, Dooyong Lee +6

Germanium-based oxides such as rutile GeO2 are garnering attention owing to their wide band gaps and the prospects for ambipolar doping for application in high-power devices. Here,…

cond-mat.mtrl-sci2022

Hole conductivity through a defect band in

Fernando P. Sabino, Intuon Chatratin, Anderson Janotti +1

Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of - and -type doping are highly desirable for high-energy…

cond-mat.mtrl-sci2022★ 1 cited

Bi2Se3 Growth on (001) GaAs Substrates for Terahertz Integrated Systems

Yongchen Liu, Wilder Acuna, Huairuo Zhang +8

Terahertz (THz) technologies have been of interest for many years due to the variety of applications including gas sensing, nonionizing imaging of biological systems, security and…

cond-mat.mtrl-sci2022★ 23 cited

Light and microwave driven spin pumping across FeGaB-BiSb interface

Vinay Sharma, Weipeng Wu, Prabesh Bajracharya +7

3-D topological insulators (TI) with large spin Hall conductivity have emerged as potential candidates for spintronic applications. Here, we report spin to charge conversion in bil…

cond-mat.mtrl-sci2022★ 11 cited

Strong coupling between a topological insulator and a III-V heterostructure at terahertz frequency

D. Quang To, Zhengtianye Wang, Q. Dai Ho +8

We probe theoretically the emergence of strong coupling in a system consisting of a topological insulator (TI) and a III-V heterostructure using a numerical approach based on the s…

cond-mat.mtrl-sci2021

Electronic properties of the Weyl semimetals CoMnX (X=Si, Ge, Sn)

Abhishek Sharan, Felipe Crasto de Lima, Shoaib Khalid +2

Using first-principles electronic structure calculations, we show that ferromagnetic Heusler compounds CoMnX (X= Si, Ge, Sn) present non-trivial topological characteristics and…

cond-mat.mtrl-sci2020★ 4 cited

Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb

Shouvik Chatterjee, Felipe Crasto de Lima, John A. Logan +18

Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topolo…

cond-mat.mtrl-sci2020

Exploring In(SeTe) alloys as photovoltaic materials

Wei Li, Xuefen Cai, Nicholas Valdes +4

InSe in the three-dimensional (3D) hexagonal crystal structure with space group (-InSe) has a direct band gap of 1.8 eV and high absorption coeffici…

cond-mat.mtrl-sci2020★ 12 cited

Electronic correlations in the semiconducting half-Heusler compound FeVSb

Estiaque H. Shourov, Patrick J. Strohbeen, Dongxue Du +8

Electronic correlations are crucial to the low energy physics of metallic systems with localized and states; however, their effect on band insulators and semiconductors is…

cond-mat.mtrl-sci2020★ 2 cited

Electronic Structure and Small Hole Polarons in YTiO3

Jin Yue, Nicholas F. Quackenbush, Iflah Laraib +10

As a prototypical Mott insulator with ferromagnetic ordering, YTiO3 (YTO) is of great interest in the study of strong electron correlation effects and orbital ordering. Here we rep…

cond-mat.mtrl-sci2020★ 2 cited

Predicting band gaps and band-edge positions of oxide perovskites using DFT and machine learning

Wei Li, Zigeng Wang, Xia Xiao +4

Density functional theory within the local or semilocal density approximations (DFT-LDA/GGA) has become a workhorse in electronic structure theory of solids, being extremely fast a…

cond-mat.mtrl-sci2020★ 15 cited

Trivial to nontrivial topology transition in rare-earth pnictides with epitaxial strain

Shoaib Khalid, Anderson Janotti

The combination of magneto-transport and topological properties has brought great attention to rare-earth mono-pnictides semimetals. For some of them, like LaSb, it is unclear whet…

cond-mat.mtrl-sci2020★ 40 cited

Quantum anomalous Hall effect in two-dimensional magnetic insulator heterojunctions

Jinbo Pan, Jiabin Yu, Yan-Fang Zhang +4

Recent years have witnessed tremendous success in the discovery of topological states of matter. Particularly, sophisticated theoretical methods in time-reversal-invariant topologi…

cond-mat.mtrl-sci2020★ 14 cited

Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

Shouvik Chatterjee, Shoaib Khalid, Hadass S. Inbar +7

Controlling the electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuS…