1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2016
InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate
Lai Wang, Xiao Meng, Di Yang +8
V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and a…
cond-mat.mtrl-sci2016★ 1 cited
"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates
Lai Wang, Xiao Meng, Di Yang +7
In metal organic vapor phase epitaxy of GaN, the growth mode is sensitive to reactor temperature. In this study, V-pit-shaped GaN has been grown on normal c-plane cone-patterned sa…