72 citations · 133 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2024★ 17 cited
Ferroelectric AlBN Films by Molecular Beam Epitaxy
Chandrashekhar Savant, Ved Gund, Kazuki Nomoto +13
We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits…
physics.app-ph2023★ 44 cited
FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors
J. Casamento, K. Nomoto, T. S. Nguyen +11
We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a n…
cond-mat.mtrl-sci2016★ 72 cited
Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates
Meng Qi, Guowang Li, Satyaki Ganguly +8
We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double hete…