11 citations · 13 across the 3 of their papers we have counts for
3 papers
physics.app-ph2019★ 11 cited
AlN/beta-Ga2O3 based HEMT: a potential pathway to ultimate high power device
Yi Lu, Hsin-Hung Yao, Jingtao Li +4
Gallium Oxide (Ga2O3) has a huge potential on the power device for its high breakdown filed and good transport properties. beta-Ga2O3 as the thermodynamics stable phase, has been d…
physics.optics2016★ 1 cited
Broadband frequency comb generation in aluminum nitride-on-sapphire microresonators
Xianwen Liu, Changzheng Sun, Bing Xiong +10
Development of chip-scale optical frequency comb with the coverage from ultra-violet (UV) to mid-infrared (MIR) wavelength is of great significance. To expand the comb spectrum int…
physics.optics2016★ 1 cited
Continuous-wave Raman Lasing in Aluminum Nitride Microresonators
Xianwen Liu, Changzheng Sun, Bing Xiong +10
We report the first investigation on continuous-wave Raman lasing in high-quality-factor aluminum nitride (AlN) microring resonators. Although wurtzite AlN is known to exhibit six…