most citedBroadband frequency comb generation in aluminum nitride-on-sapphire microresonators

1 citations · 4 across the 5 of their papers we have counts for

collaborators

5 papers

physics.optics20161 cited

Broadband frequency comb generation in aluminum nitride-on-sapphire microresonators

Xianwen Liu, Changzheng Sun, Bing Xiong +10

Development of chip-scale optical frequency comb with the coverage from ultra-violet (UV) to mid-infrared (MIR) wavelength is of great significance. To expand the comb spectrum int…

cond-mat.mes-hall2016

InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate

Lai Wang, Xiao Meng, Di Yang +8

V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and a…

cond-mat.mtrl-sci20161 cited

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

Lai Wang, Xiao Meng, Di Yang +7

In metal organic vapor phase epitaxy of GaN, the growth mode is sensitive to reactor temperature. In this study, V-pit-shaped GaN has been grown on normal c-plane cone-patterned sa…

cond-mat.mtrl-sci20161 cited

Understanding different efficiency droop behaviors in InGaN-based near-UV, blue and green light-emitting diodes through differential carrier lifetime measurements

Lai Wang, Xiao Meng, Jiaxing Wang +7

Efficiency droop effect under high injection in GaN-based light emitting diodes (LEDs) strongly depends on wavelength, which is still not well understood. In this paper, through di…

physics.optics20161 cited

Continuous-wave Raman Lasing in Aluminum Nitride Microresonators

Xianwen Liu, Changzheng Sun, Bing Xiong +10

We report the first investigation on continuous-wave Raman lasing in high-quality-factor aluminum nitride (AlN) microring resonators. Although wurtzite AlN is known to exhibit six…