9 citations · 13 across the 9 of their papers we have counts for
9 papers
D-band MUTC Photodiode Module for Ultra-Wideband 160 Gbps Photonics-Assisted Fiber-THz Integrated Communication System
Yuxin Tian, Yaxuan Li, Bing Xiong +10
Current wireless communication systems are increasingly constrained by insufficient bandwidth and limited power output, impeding the achievement of ultra-high-speed data transmissi…
Ultra-High-Efficiency Dual-Band Thin-Film Lithium Niobate Modulator Incorporating Low-k Underfill with 220 GHz Extrapolated Bandwidth for 390 Gbit/s PAM8 Transmission
Hao Liu, Yutong He, Bing Xiong +8
High-performance electro-optic modulators play a critical role in modern telecommunication networks and intra-datacenter interconnects. Low driving voltage, large electro-optic ban…
Quantum Light Generation based on GaN Microring towards Fully On-chip Source
Hong Zeng, Zhao-Qin He, Yun-Ru Fan +18
Integrated quantum light source is increasingly desirable in large-scale quantum information processing.~Despite recent remarkable advances, new material platform is constantly bei…
Suspended AlGaAs-Integrated Nonlinear Photonics
Yuqian Zhang, Changzheng Sun, Bing Xiong +6
AlGaAs is a promising integrated nonlinear photonics material with enormous optical nonlinearity and high refractive index. Nevertheless, presently AlGaAs microring resonators exhi…
Broadband frequency comb generation in aluminum nitride-on-sapphire microresonators
Xianwen Liu, Changzheng Sun, Bing Xiong +10
Development of chip-scale optical frequency comb with the coverage from ultra-violet (UV) to mid-infrared (MIR) wavelength is of great significance. To expand the comb spectrum int…
InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate
Lai Wang, Xiao Meng, Di Yang +8
V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and a…