collaborators

8 papers

cs.NE2025

Unsupervised local learning based on voltage-dependent synaptic plasticity for resistive and ferroelectric synapses

Nikhil Garg, Ismael Balafrej, Joao Henrique Quintino Palhares +11

The deployment of AI on edge computing devices faces significant challenges related to energy consumption and functionality. These devices could greatly benefit from brain-inspired…

cs.ET2025

Analytical Modelling of the Transport in Analog Filamentary Conductive-Metal-Oxide/HfOx ReRAM Devices

Donato Francesco Falcone, Stephan Menzel, Tommaso Stecconi +4

The recent co-optimization of memristive technologies and programming algorithms enabled neural networks training with in-memory computing systems. In this context, novel analog fi…

cs.ET2025

Energy-convergence trade off for the training of neural networks on bio-inspired hardware

Nikhil Garg, Paul Uriarte Vicandi, Yanming Zhang +5

The increasing deployment of wearable sensors and implantable devices is shifting AI processing demands to the extreme edge, necessitating ultra-low power for continuous operation.…

cond-mat.mtrl-sci2025

Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations

Simanta Lahkar, Valeria Bragaglia, Behnaz Bagheri +4

Resistive random access memories (ReRAMs) with a bilayer TaOx/HfO2 stack structure have shown unique multi-level resistive switching capabilities. However, the physical processes g…

cs.ET2025

All-in-One Analog AI Hardware: On-Chip Training and Inference with Conductive-Metal-Oxide/HfOx ReRAM Devices

Donato Francesco Falcone, Victoria Clerico, Wooseok Choi +9

Analog in-memory computing is an emerging paradigm designed to efficiently accelerate deep neural network workloads. Recent advancements have focused on either inference or trainin…

cond-mat.mtrl-sci2025

Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering

Manasa Kaniselvan, Kevin Portner, Donato Francesco Falcone +6

A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltag…