3 citations · 4 across the 4 of their papers we have counts for
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Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs
D. Alexiev, D. A. Prokopovich, L. Mo
The diffusion length of minority carriers L p,n is an important characterisation parameter in semiconductor materials and is of particular interest when constructing devices such a…
A Review of Liquid Phase Epitaxial Grown Gallium Arsenide
D. Alexiev, D. A. Prokopovich, S. Thomson +3
Liquid phase epitaxy of gallium arsenide (LPE GaAs) has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide ban…
Surface Passivation of GaAs using Chemical and Plasma Methods
D. Alexiev, D. A. Prokopovich, L. Mo
Passivation of the GaAs surface was attempted using aqueous P2S5-NH4OH,(NH4)2Sx and plasma nitrogenataion and hydrogenation. Results indicate that plasma nitrogenation with pretrea…
The Diffusion of Sb into Ge without Contamination by Fast Diffusing Electrically Active Impurities
D. Alexiev, D. A. Prokopovich, L. Mo
A method has been developed to permit the diffusion of Sb into Ge at high temperatures (~850 C) without contamination by fast diffusing electrically active impurities in particular…