most citedQuantitative depth profiling of Si1-xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

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cond-mat.mtrl-sci2017★ 13 cited

Quantitative depth profiling of Si1-xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

M. N. Drozdov, Y. N. Drozdov, A. Csik +8

Quantification of Ge in Si1-xGex structures (0.092<x<0.78) was carried by time-of-flight secondary ion mass spectrometry (TOF-SIMS) and electron-gas secondary neutral mass spectrom…