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cond-mat.mtrl-sci2025
Threshold Switching in Vertically Aligned MoS/SiO Heterostructures based on Silver Ion Migration
Jimin Lee, Rana Walied Ahmad, SofÃa Cruces +7
Threshold switching (TS) is a phenomenon where non-permanent changes in electrical resistance of a two-terminal device can be controlled by modulating the voltage bias. TS based on…
cond-mat.mtrl-sci2025
Unraveling the dynamics of conductive filaments in MoS based memristors by operando transmission electron microscopy
Ke Ran, Janghyun Jo, SofÃa Cruces +4
Advanced operando transmission electron microscopy (TEM) techniques enable the observation of nanoscale phenomena in electrical devices during operation. They can be used to study…
cond-mat.mtrl-sci2025
Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
SofÃa Cruces, Mohit D. Ganeriwala, Jimin Lee +14
Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent ye…