4 papers
Reduced Variability in Threshold Switches Using Heterostructures of SiO and Vertically Aligned MoS
Jimin Lee, Rana Walied Ahmad, SofÃa Cruces +7
Layered two-dimensional (2D) materials provide unique structural features, such as physical gaps between their layers that are only connected through van der Waals (vdW) forces. Th…
Threshold Switching in Vertically Aligned MoS/SiO Heterostructures based on Silver Ion Migration
Jimin Lee, Rana Walied Ahmad, SofÃa Cruces +7
Threshold switching (TS) is a phenomenon where non-permanent changes in electrical resistance of a two-terminal device can be controlled by modulating the voltage bias. TS based on…
Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
SofÃa Cruces, Mohit D. Ganeriwala, Jimin Lee +14
Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent ye…
Influence of Humidity on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors
Lukas Völkel, Rana Walied Ahmad, Alana Bestaeva +8
Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influenc…