6 papers
Reduced Variability in Threshold Switches Using Heterostructures of SiO and Vertically Aligned MoS
Jimin Lee, Rana Walied Ahmad, SofÃa Cruces +7
Layered two-dimensional (2D) materials provide unique structural features, such as physical gaps between their layers that are only connected through van der Waals (vdW) forces. Th…
Intermediate Resistive State in Wafer-Scale MoS Memristors through Lateral Silver Filament Growth for Artificial Synapse Applications
Yuan Fa, Milan Buttberg, Ke Ran +17
Memristors based on two-dimensional materials (2DMs) have garnered significant attention due to their fast resistive switching (RS) behavior and atomic-level thickness, which enabl…
Threshold Switching in Vertically Aligned MoS/SiO Heterostructures based on Silver Ion Migration
Jimin Lee, Rana Walied Ahmad, SofÃa Cruces +7
Threshold switching (TS) is a phenomenon where non-permanent changes in electrical resistance of a two-terminal device can be controlled by modulating the voltage bias. TS based on…
Unraveling the dynamics of conductive filaments in MoS based memristors by operando transmission electron microscopy
Ke Ran, Janghyun Jo, SofÃa Cruces +4
Advanced operando transmission electron microscopy (TEM) techniques enable the observation of nanoscale phenomena in electrical devices during operation. They can be used to study…
Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices
SofÃa Cruces, Mohit D. Ganeriwala, Jimin Lee +14
Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent ye…
Influence of Humidity on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors
Lukas Völkel, Rana Walied Ahmad, Alana Bestaeva +8
Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influenc…